Switch ICs and Low Noise FETs (HEMTs) have been mass-produced. We've already designed-in many Japanese domestic and Overseas' customers. We introduce direct drop-in replacement to many of Renesas Electronics Microwave devices.
Availability
Samples and evaluation boards are available.
Sample request formLow Noise GaAsFET for LNB
We've released Super Low Noise FETs (HEMTs) that shows industrial-leading levels of high gain and low noise performance at 12GHz and 20GHz.
Our Low Noise FETs line-up for LNB are direct drop-in replacement to many of Renesas Electronics Microwave devices.
By introducing our own Hallow package and device design technology,We've achieved higher gain and lower noise performance than our competitors.
Low Noise GaAsFET for Doppler sensor at 24GHz
Low Noise FETs (HEMT) for Doppler sensor provide low noise, high gain and high CNR performance at 24GHz.
This Noise FETs line-up for Doppler sensor can replace to Renesas Electronics EOL FET series directly.
These FETs can build Oscillator, Low noise amplifier and Driver amplifier of 24GHz Doppler sensor easily.
RF switch
We've released RF switch ICs for wireless LAN application.
Our RF switch ICs are direct drop-in replacement to many of Renesas
Electronics Microwave devices.
By introducing our own design know-how, our RF switch ICs shows lower insertion loss,
higher isolation and higher linearity performance than our competitors.
Low Noise Amplifier GaAsIC for GNSS/SDARS
GaAs Low Noise Amplifire ICs for GNSS(Global Navigation Satellite System) and SDARS(Satellite Digital Audio Radio Services) provide low noise, high gain and high input 1dB compression performance.
This GaAs LNA ICs line-up can replace to Renesas Electronics EOL FET series.
Various PKG line-up such as 4pin, 6pin , 6pin leadless and 8pin PKG are prepared for Car Antenna, mobile phone and IoT equipment.